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Transcend TS512MSK64W8H memory module 4 GB 1 x 8 GB DDR3L 1866 MHz1

Transcend TS512MSK64W8H memory module 4 GB 1 x 8 GB DDR3L 1866 MHz

Transcend TS512MSK64W8H. Component for: Notebook, Internal memory: 4 GB, Memory layout (modules x size): 1 x 8 GB, Internal memory type: DDR3L, Memory clock speed: 1866 MHz, Memory form factor: 204-pin SO-DIMM, CAS latency: 13
Manufacturer: Transcend
SKU: 5646713
Manufacturer part number: TS512MSK64W8H
GTIN: 0760557834670
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Transcend's DDR3 DRAM modules operate at a nominal voltage of 1.5V or 1.35V, offering exceptional clock speeds to cater to the demands of the embedded industry. The modules are available in multiple form factors and technologies, such as ECC and wide-temperature support. All components are of the highest quality, having been sourced directly from the world's first-tier supplier of DRAM chips and stringently tested for unparalleled compatibility, reliability, and performance.

 

  • JEDEC standard 1.5V ± 0.075V power supply
  • Low Voltage models: JEDEC standard 1.35V (1.28V~1.45V) power supply
  • 8 bit pre-fetch
  • Burst Length: 4, 8
  • Internal calibration through ZQ pin
  • On-die termination with ODT pin
  • Serial presence detect with EEPROM
  • 100% tested for stability, compatibility and performance
Transcend's DDR3 DRAM modules operate at a nominal voltage of 1.5V or 1.35V, offering exceptional clock speeds to cater to the demands of the embedded industry. The modules are available in multiple form factors and technologies, such as ECC and wide-temperature support. All components are of the highest quality, having been sourced directly from the world's first-tier supplier of DRAM chips and stringently tested for unparalleled compatibility, reliability, and performance.

 

  • JEDEC standard 1.5V ± 0.075V power supply
  • Low Voltage models: JEDEC standard 1.35V (1.28V~1.45V) power supply
  • 8 bit pre-fetch
  • Burst Length: 4, 8
  • Internal calibration through ZQ pin
  • On-die termination with ODT pin
  • Serial presence detect with EEPROM
  • 100% tested for stability, compatibility and performance
Products specifications
Attribute nameAttribute value
Harmonized System (HS) code84733020
Features
Memory voltage1.3 V
Internal memory4 GB
Internal memory typeDDR3L
Memory clock speed1866 MHz
Component forNotebook
Memory form factor204-pin SO-DIMM
ECCN
Buffered memory typeUnregistered (unbuffered)
CAS latency13
Memory layout (modules x size)1 x 8 GB
Memory ranking1
Module configuration512M x 8
Operational conditions
Operating temperature (T-T)0 - 85 °C
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Products specifications
Attribute nameAttribute value
Harmonized System (HS) code84733020
Features
Memory voltage1.3 V
Internal memory4 GB
Internal memory typeDDR3L
Memory clock speed1866 MHz
Component forNotebook
Memory form factor204-pin SO-DIMM
ECCN
Buffered memory typeUnregistered (unbuffered)
CAS latency13
Memory layout (modules x size)1 x 8 GB
Memory ranking1
Module configuration512M x 8
Operational conditions
Operating temperature (T-T)0 - 85 °C
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