Transcend TS2GSH64V2E-I memory module 16 GB 2 x 8 GB DDR4 3200 MHz

Transcend TS2GSH64V2E-I. Component for: Notebook, Internal memory: 16 GB, Memory layout (modules x size): 2 x 8 GB, Internal memory type: DDR4, Memory clock speed: 3200 MHz, Memory form factor: 260-pin SO-DIMM, CAS latency: 22
Manufacturer: Transcend
SKU: 6795125
Manufacturer part number: TS2GSH64V2E-I
GTIN: 760557851967
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Transcend's DDR4 DRAM modules operate at a nominal voltage of just 1.2V, offering higher energy effciency and exceptional clock speeds to cater to the demands of the embedded industry. The modules are available in multiple form factors and technologies, such as ECC and wide-temperature support. All components are of the highest quality, having been sourced directly from the world's first-tier supplier of DRAM chips and stringently tested for unparalleled compatibility, reliability, and performance.
Transcend's DDR4 DRAM modules operate at a nominal voltage of just 1.2V, offering higher energy effciency and exceptional clock speeds to cater to the demands of the embedded industry. The modules are available in multiple form factors and technologies, such as ECC and wide-temperature support. All components are of the highest quality, having been sourced directly from the world's first-tier supplier of DRAM chips and stringently tested for unparalleled compatibility, reliability, and performance.
Products specifications
Attribute nameAttribute value
Features
Module configuration2048M x 8
Internal memory16 GB
Internal memory typeDDR4
Memory clock speed3200 MHz
Component forNotebook
Memory form factor260-pin SO-DIMM
ECCN
Buffered memory typeUnregistered (unbuffered)
CAS latency22
Memory voltage1.2 V
Memory layout (modules x size)2 x 8 GB
Memory ranking1
Memory channelsDual-channel
Operational conditions
Operating temperature (T-T)-40 - 85 °C
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Products specifications
Attribute nameAttribute value
Features
Module configuration2048M x 8
Internal memory16 GB
Internal memory typeDDR4
Memory clock speed3200 MHz
Component forNotebook
Memory form factor260-pin SO-DIMM
ECCN
Buffered memory typeUnregistered (unbuffered)
CAS latency22
Memory voltage1.2 V
Memory layout (modules x size)2 x 8 GB
Memory ranking1
Memory channelsDual-channel
Operational conditions
Operating temperature (T-T)-40 - 85 °C