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Transcend 4GB DDR3 memory module 2 x 8 GB 1600 MHz1
Transcend 4GB DDR3 memory module 2 x 8 GB 1600 MHz1
Transcend 4GB DDR3 memory module 2 x 8 GB 1600 MHz2

Transcend 4GB DDR3 memory module 2 x 8 GB 1600 MHz

Transcend 4GB DDR3. Internal memory: 4 GB, Memory layout (modules x size): 2 x 8 GB, Internal memory type: DDR3, Memory clock speed: 1600 MHz, Memory form factor: 240-pin DIMM, CAS latency: 11
Manufacturer: Transcend
SKU: 3685216
Manufacturer part number: TS512MLK64V6N
GTIN: 0760557821328
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Transcend's DDR3 DRAM modules operate at a nominal voltage of 1.5V or 1.35V, offering exceptional clock speeds to cater to the demands of the embedded industry. The modules are available in multiple form factors and technologies, such as ECC and wide-temperature support. All components are of the highest quality, having been sourced directly from the world's first-tier supplier of DRAM chips and stringently tested for unparalleled compatibility, reliability, and performance.

 

  • JEDEC standard 1.5V ± 0.075V power supply
  • Low Voltage models: JEDEC standard 1.35V (1.28V~1.45V) power supply
  • 8 bit pre-fetch
  • Burst Length: 4, 8
  • Internal calibration through ZQ pin
  • On-die termination with ODT pin
  • Serial presence detect with EEPROM
  • 100% tested for stability, compatibility and performance
Transcend's DDR3 DRAM modules operate at a nominal voltage of 1.5V or 1.35V, offering exceptional clock speeds to cater to the demands of the embedded industry. The modules are available in multiple form factors and technologies, such as ECC and wide-temperature support. All components are of the highest quality, having been sourced directly from the world's first-tier supplier of DRAM chips and stringently tested for unparalleled compatibility, reliability, and performance.

 

  • JEDEC standard 1.5V ± 0.075V power supply
  • Low Voltage models: JEDEC standard 1.35V (1.28V~1.45V) power supply
  • 8 bit pre-fetch
  • Burst Length: 4, 8
  • Internal calibration through ZQ pin
  • On-die termination with ODT pin
  • Serial presence detect with EEPROM
  • 100% tested for stability, compatibility and performance
Products specifications
Attribute nameAttribute value
Features
Module configuration256M x 8
Internal memory4 GB
Internal memory typeDDR3
Memory clock speed1600 MHz
Memory form factor240-pin DIMM
ECCN
Buffered memory typeUnregistered (unbuffered)
CAS latency11
Memory voltage1.5 V
Memory layout (modules x size)2 x 8 GB
Memory ranking2
Operational conditions
Operating temperature (T-T)0 - 85 °C
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Products specifications
Attribute nameAttribute value
Features
Module configuration256M x 8
Internal memory4 GB
Internal memory typeDDR3
Memory clock speed1600 MHz
Memory form factor240-pin DIMM
ECCN
Buffered memory typeUnregistered (unbuffered)
CAS latency11
Memory voltage1.5 V
Memory layout (modules x size)2 x 8 GB
Memory ranking2
Operational conditions
Operating temperature (T-T)0 - 85 °C
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