Transcend 1GB DDR2-800/PC6400 240-pin DIMM 5-5-5 - 128Mx8 memory module DDR 400 MHz

Transcend 1GB DDR2-800/PC6400 240-pin DIMM 5-5-5 - 128Mx8. Internal memory: 1 GB, Internal memory type: DDR, Memory clock speed: 400 MHz, Memory form factor: 240-pin DIMM
Manufacturer: Transcend
SKU: 2232357
Manufacturer part number: TS128MLQ64V8U
GTIN: 0760557810858
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The TS128MLQ64V8U is a 128M x 64bits DDR2-800 Unbuffered DIMM. The TS128MLQ64V8U consists of 8 pcs 128Mx8bits DDR2 SDRAMs in 68 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin printed circuit board. The TS128MLQ64V8U is a Dual In-Line Memory Module and is intended for mounting into 240-pin edge connector sockets.

Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operation frequencies, programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

Features:
- RoHS compliant products.
- JEDEC standard 1.8V ± 0.1V Power supply.
- Operating Temperature: TC = 0 to 85°C.
- VDDQ=1.8V ± 0.1V.
- Max clock Freq: 400MHZ; 800Mb/S/Pin.
- Posted CAS.
- Programmable CAS Latency: 3,4,5.
- Programmable Additive Latency :0, 1,2,3 and 4.
- Write Latency (WL) = Read Latency (RL)-1.
- Burst Length: 4,8(Interleave/nibble sequential).
- Programmable sequential / Interleave Burst Mode.
- Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature).
- Off-Chip Driver (OCD) Impedance Adjustment.
- MRS cycle with address key programs.
- On Die Termination.
- Serial presence detect with EEPROM.
The TS128MLQ64V8U is a 128M x 64bits DDR2-800 Unbuffered DIMM. The TS128MLQ64V8U consists of 8 pcs 128Mx8bits DDR2 SDRAMs in 68 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin printed circuit board. The TS128MLQ64V8U is a Dual In-Line Memory Module and is intended for mounting into 240-pin edge connector sockets.

Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operation frequencies, programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

Features:
- RoHS compliant products.
- JEDEC standard 1.8V ± 0.1V Power supply.
- Operating Temperature: TC = 0 to 85°C.
- VDDQ=1.8V ± 0.1V.
- Max clock Freq: 400MHZ; 800Mb/S/Pin.
- Posted CAS.
- Programmable CAS Latency: 3,4,5.
- Programmable Additive Latency :0, 1,2,3 and 4.
- Write Latency (WL) = Read Latency (RL)-1.
- Burst Length: 4,8(Interleave/nibble sequential).
- Programmable sequential / Interleave Burst Mode.
- Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature).
- Off-Chip Driver (OCD) Impedance Adjustment.
- MRS cycle with address key programs.
- On Die Termination.
- Serial presence detect with EEPROM.
Products specifications
Attribute nameAttribute value
Features
Internal memory1 GB
Internal memory typeDDR
Memory clock speed400 MHz
Data transmission
Supported data transfer rates800Mb/S/Pin
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Products specifications
Attribute nameAttribute value
Features
Internal memory1 GB
Internal memory typeDDR
Memory clock speed400 MHz
Data transmission
Supported data transfer rates800Mb/S/Pin