Kingston Technology ValueRAM KVR32S22D8/32 memory module 32 GB 1 x 32 GB DDR4 3200 MHz

Kingston Technology ValueRAM KVR32S22D8/32. Component for: Notebook, Internal memory: 32 GB, Memory layout (modules x size): 1 x 32 GB, Internal memory type: DDR4, Memory clock speed: 3200 MHz, Memory form factor: 260-pin SO-DIMM, CAS latency: 22
Manufacturer: Kingston Technology
SKU: 5972516
Manufacturer part number: KVR32S22D8/32
GTIN: 0740617310924
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ValueRAM, Kingston’s industry standard memory, delivers award-winning performance and legendary Kingston reliability. When you know what you want, you want ValueRAM.

 

  • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
  • Low-power auto self refresh (LPASR)
  • Data bus inversion (DBI) for data bus
  • On-die VREFDQ generation and calibration
  • Dual-rank
  • On-board I2 serial presence-detect (SPD) EEPROM
  • Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)
  • Selectable BC4 or BL8 on-the-fly (OTF)
  • Terminated control command and address bus
ValueRAM, Kingston’s industry standard memory, delivers award-winning performance and legendary Kingston reliability. When you know what you want, you want ValueRAM.

 

  • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
  • Low-power auto self refresh (LPASR)
  • Data bus inversion (DBI) for data bus
  • On-die VREFDQ generation and calibration
  • Dual-rank
  • On-board I2 serial presence-detect (SPD) EEPROM
  • Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)
  • Selectable BC4 or BL8 on-the-fly (OTF)
  • Terminated control command and address bus
Products specifications
Attribute nameAttribute value
Country of OriginTaiwan
Width2.74"
Depth0.146"
Height1.18"
JEDEC standardY
Doesn't containHalogen
Harmonized System (HS) code84733020
Row cycle time45.75 ns
Refresh row cycle time350 ns
Row active time32 ns
Programming power voltage (VPP)2.5 V
Features
Internal memory32 GB
Internal memory typeDDR4
Memory clock speed3200 MHz
Component forNotebook
Memory form factor260-pin SO-DIMM
ECCN
Buffered memory typeUnregistered (unbuffered)
CAS latency22
Memory voltage1.2 V
Memory layout (modules x size)1 x 32 GB
Operational conditions
Operating temperature (T-T)0 - 85 °C
Storage temperature (T-T)-55 - 100 °C
Technical details
Sustainability certificatesRoHS
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Products specifications
Attribute nameAttribute value
Country of OriginTaiwan
Width2.74"
Depth0.146"
Height1.18"
JEDEC standardY
Doesn't containHalogen
Harmonized System (HS) code84733020
Row cycle time45.75 ns
Refresh row cycle time350 ns
Row active time32 ns
Programming power voltage (VPP)2.5 V
Features
Internal memory32 GB
Internal memory typeDDR4
Memory clock speed3200 MHz
Component forNotebook
Memory form factor260-pin SO-DIMM
ECCN
Buffered memory typeUnregistered (unbuffered)
CAS latency22
Memory voltage1.2 V
Memory layout (modules x size)1 x 32 GB
Operational conditions
Operating temperature (T-T)0 - 85 °C
Storage temperature (T-T)-55 - 100 °C
Technical details
Sustainability certificatesRoHS
Product tags
  • (92706)