Kingston Technology ValueRAM KVR26S19S6/4 memory module 4 GB 1 x 4 GB DDR4 2666 MHz

Kingston Technology ValueRAM KVR26S19S6/4. Component for: Notebook, Internal memory: 4 GB, Memory layout (modules x size): 1 x 4 GB, Internal memory type: DDR4, Memory clock speed: 2666 MHz, Memory form factor: 260-pin SO-DIMM, CAS latency: 19
Manufacturer: Kingston Technology
SKU: 5216075
Manufacturer part number: KVR26S19S6/4
GTIN: 0740617280647
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This document describes ValueRAM's KVR26S19S6/4 as a 512M x 64-bit (4GB) DDR4-2666 CL19 SDRAM (Synchronous DRAM), 1Rx16, memory module, based on four 512M x 16-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-2666 timing of 19-19-19 at 1.2V. This 260-pin SODIMM uses gold contact fingers.
This document describes ValueRAM's KVR26S19S6/4 as a 512M x 64-bit (4GB) DDR4-2666 CL19 SDRAM (Synchronous DRAM), 1Rx16, memory module, based on four 512M x 16-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-2666 timing of 19-19-19 at 1.2V. This 260-pin SODIMM uses gold contact fingers.
Products specifications
Attribute nameAttribute value
Depth0.0965"
Width2.74"
Height1.18"
Doesn't containHalogen
Row cycle time45.75 ns
Refresh row cycle time350 ns
Row active time32 ns
Programming power voltage (VPP)2.5 V
Features
Internal memory4 GB
Internal memory typeDDR4
Memory clock speed2666 MHz
Component forNotebook
Memory form factor260-pin SO-DIMM
Buffered memory typeUnregistered (unbuffered)
CAS latency19
Memory voltage1.2 V
Memory layout (modules x size)1 x 4 GB
Memory ranking1
Operational conditions
Operating temperature (T-T)0 - 85 °C
Storage temperature (T-T)-55 - 100 °C
Technical details
Sustainability certificatesRoHS
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Products specifications
Attribute nameAttribute value
Depth0.0965"
Width2.74"
Height1.18"
Doesn't containHalogen
Row cycle time45.75 ns
Refresh row cycle time350 ns
Row active time32 ns
Programming power voltage (VPP)2.5 V
Features
Internal memory4 GB
Internal memory typeDDR4
Memory clock speed2666 MHz
Component forNotebook
Memory form factor260-pin SO-DIMM
Buffered memory typeUnregistered (unbuffered)
CAS latency19
Memory voltage1.2 V
Memory layout (modules x size)1 x 4 GB
Memory ranking1
Operational conditions
Operating temperature (T-T)0 - 85 °C
Storage temperature (T-T)-55 - 100 °C
Technical details
Sustainability certificatesRoHS
Product tags
  • (92706)