Kingston Technology ValueRAM KVR24S17S8/4BK memory module 8 GB 1 x 8 GB DDR4 2400 MHz

Kingston Technology ValueRAM KVR24S17S8/4BK. Component for: Notebook, Internal memory: 8 GB, Memory layout (modules x size): 1 x 8 GB, Internal memory type: DDR4, Memory clock speed: 2400 MHz, Memory form factor: 260-pin SO-DIMM, CAS latency: 17
Manufacturer: Kingston Technology
SKU: 5553982
Manufacturer part number: KVR24S17S8/4BK
GTIN: 0740617295719
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ValueRAM, Kingston’s industry standard memory, delivers award-winning performance and legendary Kingston reliability. When you know what you want, you want ValueRAM.

 

  • Data bus inversion (DBI) for data bus
  • On-die VREFDQ generation and calibration
  • Single-rank
  • On-board I2 serial presence-detect (SPD) EEPROM
  • 16 internal banks; 4 groups of 4 banks each
  • Fly-by topology
  • Terminated control command and address bus
ValueRAM, Kingston’s industry standard memory, delivers award-winning performance and legendary Kingston reliability. When you know what you want, you want ValueRAM.

 

  • Data bus inversion (DBI) for data bus
  • On-die VREFDQ generation and calibration
  • Single-rank
  • On-board I2 serial presence-detect (SPD) EEPROM
  • 16 internal banks; 4 groups of 4 banks each
  • Fly-by topology
  • Terminated control command and address bus
Products specifications
Attribute nameAttribute value
Width2.74"
Depth0.146"
Height1.18"
JEDEC standardY
Lead platingGold
Row cycle time45.75 ns
Refresh row cycle time350 ns
Row active time32 ns
Features
Internal memory8 GB
Internal memory typeDDR4
Memory clock speed2400 MHz
Component forNotebook
Memory form factor260-pin SO-DIMM
ECCN
Buffered memory typeUnregistered (unbuffered)
CAS latency17
Memory voltage1.2 V
Memory layout (modules x size)1 x 8 GB
Module configuration1024M x 64
Operational conditions
Operating temperature (T-T)0 - 85 °C
Storage temperature (T-T)-55 - 100 °C
Technical details
Sustainability certificatesRoHS
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Products specifications
Attribute nameAttribute value
Width2.74"
Depth0.146"
Height1.18"
JEDEC standardY
Lead platingGold
Row cycle time45.75 ns
Refresh row cycle time350 ns
Row active time32 ns
Features
Internal memory8 GB
Internal memory typeDDR4
Memory clock speed2400 MHz
Component forNotebook
Memory form factor260-pin SO-DIMM
ECCN
Buffered memory typeUnregistered (unbuffered)
CAS latency17
Memory voltage1.2 V
Memory layout (modules x size)1 x 8 GB
Module configuration1024M x 64
Operational conditions
Operating temperature (T-T)0 - 85 °C
Storage temperature (T-T)-55 - 100 °C
Technical details
Sustainability certificatesRoHS
Product tags
  • (92706)