Kingston Technology KVR32S22S6/8 memory module 8 GB 1 x 8 GB DDR4 3200 MHz

Kingston Technology KVR32S22S6/8. Component for: Notebook, Internal memory: 8 GB, Memory layout (modules x size): 1 x 8 GB, Internal memory type: DDR4, Memory clock speed: 3200 MHz, Memory form factor: 260-pin SO-DIMM, CAS latency: 22
Manufacturer: Kingston Technology
SKU: 5951022
Manufacturer part number: KVR32S22S6/8
GTIN: 0740617310887
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This document describes ValueRAM's KVR32S22S6/8 as a 1G x 64-bit (8GB) DDR4-3200 CL22 SDRAM (Synchronous DRAM), 1Rx16, memory module, based on four 1G x 16-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-3200 timing of 22-22-22 at 1.2V. This 260-pin SODIMM uses gold contact fingers.
This document describes ValueRAM's KVR32S22S6/8 as a 1G x 64-bit (8GB) DDR4-3200 CL22 SDRAM (Synchronous DRAM), 1Rx16, memory module, based on four 1G x 16-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-3200 timing of 22-22-22 at 1.2V. This 260-pin SODIMM uses gold contact fingers.
Products specifications
Attribute nameAttribute value
Width2.74"
Height1.18"
JEDEC standardY
Harmonized System (HS) code84733020
Row cycle time45.75 ns
Refresh row cycle time350 ns
Row active time32 ns
SPD profileY
Features
Internal memory8 GB
Internal memory typeDDR4
Memory clock speed3200 MHz
Component forNotebook
Memory form factor260-pin SO-DIMM
ECCN
Buffered memory typeUnregistered (unbuffered)
CAS latency22
Memory voltage1.2 V
Memory layout (modules x size)1 x 8 GB
Operational conditions
Operating temperature (T-T)0 - 85 °C
Storage temperature (T-T)-55 - 100 °C
Technical details
Sustainability certificatesRoHS
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Products specifications
Attribute nameAttribute value
Width2.74"
Height1.18"
JEDEC standardY
Harmonized System (HS) code84733020
Row cycle time45.75 ns
Refresh row cycle time350 ns
Row active time32 ns
SPD profileY
Features
Internal memory8 GB
Internal memory typeDDR4
Memory clock speed3200 MHz
Component forNotebook
Memory form factor260-pin SO-DIMM
ECCN
Buffered memory typeUnregistered (unbuffered)
CAS latency22
Memory voltage1.2 V
Memory layout (modules x size)1 x 8 GB
Operational conditions
Operating temperature (T-T)0 - 85 °C
Storage temperature (T-T)-55 - 100 °C
Technical details
Sustainability certificatesRoHS
Product tags
  • (92706)