Kingston Technology KVR26N19S8K2/16 memory module 16 GB 2 x 8 GB DDR4 2666 MHz

Kingston Technology KVR26N19S8K2/16. Component for: PC/server, Internal memory: 16 GB, Memory layout (modules x size): 2 x 8 GB, Internal memory type: DDR4, Memory clock speed: 2666 MHz, Memory form factor: 288-pin DIMM, CAS latency: 19
Manufacturer: Kingston Technology
SKU: 6517817
Manufacturer part number: KVR26N19S8K2/16
GTIN: 0740617307573
Ship to
*
*
Shipping Method
Name
Estimated Delivery
Price
No shipping options
This document describes ValueRAM's KVR26N19S8K2/16 is a kit of two 1G x 64-bit (8GB) DDR4-2666 CL19 SDRAM (Synchronous DRAM), 1Rx8, memory module, based on eight 1G x 8-bit FBGA components. Total kit capacity is 16GB. The SPD is programmed to JEDEC standard latency DDR4-2666 timing of 19-19-19 at 1.2V. Each 288-pin DIMM uses gold contact fingers.
This document describes ValueRAM's KVR26N19S8K2/16 is a kit of two 1G x 64-bit (8GB) DDR4-2666 CL19 SDRAM (Synchronous DRAM), 1Rx8, memory module, based on eight 1G x 8-bit FBGA components. Total kit capacity is 16GB. The SPD is programmed to JEDEC standard latency DDR4-2666 timing of 19-19-19 at 1.2V. Each 288-pin DIMM uses gold contact fingers.
Products specifications
Attribute nameAttribute value
Height1.23"
JEDEC standardY
BacklightN
Harmonized System (HS) code84733020
Row cycle time45.75 ns
Refresh row cycle time350 ns
Row active time32 ns
SPD profileY
Programming power voltage (VPP)2.5 V
Features
Internal memory16 GB
Internal memory typeDDR4
Memory clock speed2666 MHz
Component forPC/server
Memory form factor288-pin DIMM
ECCN
Buffered memory typeUnregistered (unbuffered)
CAS latency19
Memory voltage1.2 V
Memory layout (modules x size)2 x 8 GB
Memory ranking1
Module configuration1024M x 64
Operational conditions
Operating temperature (T-T)0 - 85 °C
Storage temperature (T-T)-55 - 100 °C
Technical details
Sustainability certificatesRoHS
*
*
*
Products specifications
Attribute nameAttribute value
Height1.23"
JEDEC standardY
BacklightN
Harmonized System (HS) code84733020
Row cycle time45.75 ns
Refresh row cycle time350 ns
Row active time32 ns
SPD profileY
Programming power voltage (VPP)2.5 V
Features
Internal memory16 GB
Internal memory typeDDR4
Memory clock speed2666 MHz
Component forPC/server
Memory form factor288-pin DIMM
ECCN
Buffered memory typeUnregistered (unbuffered)
CAS latency19
Memory voltage1.2 V
Memory layout (modules x size)2 x 8 GB
Memory ranking1
Module configuration1024M x 64
Operational conditions
Operating temperature (T-T)0 - 85 °C
Storage temperature (T-T)-55 - 100 °C
Technical details
Sustainability certificatesRoHS
Product tags
  • (92706)