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Kingston Technology KSM26SED8/32HC memory module 32 GB DDR4 2666 MHz ECC1
Kingston Technology KSM26SED8/32HC memory module 32 GB DDR4 2666 MHz ECC1
Kingston Technology KSM26SED8/32HC memory module 32 GB DDR4 2666 MHz ECC2

Kingston Technology KSM26SED8/32HC memory module 32 GB DDR4 2666 MHz ECC

Kingston Technology KSM26SED8/32HC. Internal memory: 32 GB, Internal memory type: DDR4, Memory clock speed: 2666 MHz, Memory form factor: 260-pin SO-DIMM, CAS latency: 19, ECC
Manufacturer: Kingston Technology
SKU: 6466192
Manufacturer part number: KSM26SED8/32HC
GTIN: 0740617324778
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Kingston's KSM26SED8/32HA is a 4G x 72-bit (32GB) DDR4-2666 CL19 SDRAM (Synchronous DRAM) w/ parity, 2Rx8, ECC, memory module, based on eighteen 2G x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-2666 timing of 19-19-19 at 1.2V. Each 260-pin SODIMM uses gold contact fingers.
Kingston's KSM26SED8/32HA is a 4G x 72-bit (32GB) DDR4-2666 CL19 SDRAM (Synchronous DRAM) w/ parity, 2Rx8, ECC, memory module, based on eighteen 2G x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-2666 timing of 19-19-19 at 1.2V. Each 260-pin SODIMM uses gold contact fingers.
Products specifications
Attribute nameAttribute value
JEDEC standardY
BacklightN
Harmonized System (HS) code84733020
Row cycle time45.75 ns
Refresh row cycle time350 ns
Row active time32 ns
SPD profileY
Programming power voltage (VPP)2.5 V
On-Die ECCY
Features
Internal memory32 GB
Internal memory typeDDR4
Memory clock speed2666 MHz
Memory form factor260-pin SO-DIMM
ECCY
Buffered memory typeUnregistered (unbuffered)
CAS latency19
Memory voltage1.2 V
Memory ranking2
Operational conditions
Operating temperature (T-T)0 - 85 °C
Storage temperature (T-T)-55 - 100 °C
Technical details
Sustainability certificatesRoHS
Data transmission
Supported data transfer ratesPC4-2666, PC4-2400, PC4-2133, PC4-1866, PC4-1600
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Products specifications
Attribute nameAttribute value
JEDEC standardY
BacklightN
Harmonized System (HS) code84733020
Row cycle time45.75 ns
Refresh row cycle time350 ns
Row active time32 ns
SPD profileY
Programming power voltage (VPP)2.5 V
On-Die ECCY
Features
Internal memory32 GB
Internal memory typeDDR4
Memory clock speed2666 MHz
Memory form factor260-pin SO-DIMM
ECCY
Buffered memory typeUnregistered (unbuffered)
CAS latency19
Memory voltage1.2 V
Memory ranking2
Operational conditions
Operating temperature (T-T)0 - 85 °C
Storage temperature (T-T)-55 - 100 °C
Technical details
Sustainability certificatesRoHS
Data transmission
Supported data transfer ratesPC4-2666, PC4-2400, PC4-2133, PC4-1866, PC4-1600
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