Kingston Technology KSM26RD8/16HDI memory module 16 GB 1 x 16 GB DDR4 2666 MHz ECC

Kingston Technology KSM26RD8/16HDI. Component for: PC/server, Internal memory: 16 GB, Memory layout (modules x size): 1 x 16 GB, Internal memory type: DDR4, Memory clock speed: 2666 MHz, Memory form factor: 288-pin DIMM, CAS latency: 19, ECC
Manufacturer: Kingston Technology
SKU: 5866344
Manufacturer part number: KSM26RD8/16HDI
GTIN: 0740617308198
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Kingston's KSM26RD8/16HDI is a 2G x 72-bit (16GB) DDR4-2666 CL19 SDRAM (Synchronous DRAM) registered w/ parity, 2Rx8, ECC, memory module, based on eighteen 1G x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-2666 timing of 19-19-19 at 1.2V. Each 288-pin DIMM uses gold contact fingers.

 

  • 16 internal banks
  • Bank Grouping is applied, and CAS to CAS latency (tCCD_L, tCCD_S) for the banks in the same or different bank group accesses are available
  • Bi-Directional Differential Data Strobe
  • 8 bit pre-fetch
  • Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop)
  • Supports ECC error correction and detection
  • On-Die Termination (ODT)
  • Temperature sensor with integrated SPD
  • This product is in compliance with the RoHS directive
  • Per DRAM Addressability is supported
  • Internal Vref DQ level generation is available
  • Write CRC is supported at all speed grades
  • CA parity (Command/Address Parity) mode is supported
Kingston's KSM26RD8/16HDI is a 2G x 72-bit (16GB) DDR4-2666 CL19 SDRAM (Synchronous DRAM) registered w/ parity, 2Rx8, ECC, memory module, based on eighteen 1G x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-2666 timing of 19-19-19 at 1.2V. Each 288-pin DIMM uses gold contact fingers.

 

  • 16 internal banks
  • Bank Grouping is applied, and CAS to CAS latency (tCCD_L, tCCD_S) for the banks in the same or different bank group accesses are available
  • Bi-Directional Differential Data Strobe
  • 8 bit pre-fetch
  • Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop)
  • Supports ECC error correction and detection
  • On-Die Termination (ODT)
  • Temperature sensor with integrated SPD
  • This product is in compliance with the RoHS directive
  • Per DRAM Addressability is supported
  • Internal Vref DQ level generation is available
  • Write CRC is supported at all speed grades
  • CA parity (Command/Address Parity) mode is supported
Products specifications
Attribute nameAttribute value
Row cycle time46.25 ns
Width5.25"
Height1.23"
JEDEC standardY
Harmonized System (HS) code84733020
Refresh row cycle time350 ns
Row active time32 ns
Programming power voltage (VPP)2.5 V
Features
Internal memory16 GB
Internal memory typeDDR4
Memory clock speed2666 MHz
Component forPC/server
Memory form factor288-pin DIMM
ECCY
CAS latency19
Memory voltage1.2 V
Memory layout (modules x size)1 x 16 GB
Module configuration2048M x 72
Operational conditions
Operating temperature (T-T)0 - 85 °C
Storage temperature (T-T)-55 - 100 °C
Technical details
Sustainability certificatesRoHS
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Products specifications
Attribute nameAttribute value
Row cycle time46.25 ns
Width5.25"
Height1.23"
JEDEC standardY
Harmonized System (HS) code84733020
Refresh row cycle time350 ns
Row active time32 ns
Programming power voltage (VPP)2.5 V
Features
Internal memory16 GB
Internal memory typeDDR4
Memory clock speed2666 MHz
Component forPC/server
Memory form factor288-pin DIMM
ECCY
CAS latency19
Memory voltage1.2 V
Memory layout (modules x size)1 x 16 GB
Module configuration2048M x 72
Operational conditions
Operating temperature (T-T)0 - 85 °C
Storage temperature (T-T)-55 - 100 °C
Technical details
Sustainability certificatesRoHS
Product tags
  • (92706)